The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Aug. 12, 1999
Applicant:
Inventors:
Stephen Keetai Park, Cupertino, CA (US);
Guarionex Morales, Sunnyvale, CA (US);
Bharath Rangarajan, Santa Clara, CA (US);
Jeff Shields, Sunnyvale, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ; H01L 2/176 ; H01L 2/14763 ; H01L 2/1461 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/1425 ; H01L 2/176 ; H01L 2/14763 ; H01L 2/1461 ; H01L 2/131 ;
Abstract
A fabrication method reduces the amount of discoloration on interlevel dielectric layers due to anti-reflective coatings (ARC). The invention utilizes a barrier layer, such as, silicon nitride (SiN) that prevents the anti-reflective coating from contacting the interlevel dielectric layer (ILD,). The anti-reflective coating can be silicon oxynitride (SiON) deposited by LPCVD or PECVD.