The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Nov. 04, 1999
Chih-Jen Huang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device with various thicknesses of the gate oxide layers is described, which method is applicable to a substrate having a first region and a second region, wherein the first region has a first conductive layer to isolate the first gate oxide layer from the substrate. Thereafter, a first oxide layer/nitride layer is formed on the first conductive layer, followed by forming a doped polysilicon layer on the first oxide layer/nitride layer, wherein the doped polysilicon layer is not formed in the second region. Subsequently, a second gate oxide layer is formed on the substrate of the second region, whereas a first oxide layer/nitride layer/second oxide layer is concurrently converted from the oxide layer/nitride layer/doped polysilicon layer. A defined second conductive layer is then formed on the first oxide layer/nitride layer/second oxide layer and the second gate oxide layer.