System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer

Abstract

A system is provided for chemical mechanical polishing (CMP) of a semiconductor wafer by periodically relatively moving a polishing pad on a rotating platen, and the wafer, retained in the aperture of a rotating and oscillating ring having a wear surface surrounding the aperture and wafer, with respect to each other while the wafer and wear surface frictionally contact the pad. A CMP slurry is dispensed to the wafer periphery in the vicinity of the pad at a plurality of perimetrically spaced apart channels in the wear surface maintained in fixed relation to the wafer during the relative movement. The ring is fixed to the underside of a carrier in turn fixed at its upper portion to the bottom end of a spindle which is rotatably mounted at its top end on an oscillating support beam, such that the wafer, ring, carrier and spindle rotate and oscillate in common. The carrier has a heat exchanger to heat or cool the slurry. Passages in the spindle flow connected with conduits in the carrier correspondingly supply the slurry to the ring channels, temperature adjusting fluid to and from the heat exchanger, and pressure fluid, e.g., air, to the inner side of the wafer in the ring aperture, respectively, during common rotation and oscillation of the wafer, ring, carrier and spindle.