The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Feb. 03, 1999
Joseph J. Burkhardt, Minneapolis, MN (US);
Jeremy A. Schweigert, Eagan, MN (US);
Daniel J. Fertig, Edina, MN (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
A process for forming an isolated thin-film trench capacitor includes forming a first trench in a substrate and filling it with an electrically insulating material. A trench capacitor is formed in the first trench by forming first and second pluralities of conductive plates, such as polycrystalline silicon, separated by a layer of dielectric material. The first plurality of conductive plates are electrically connected together and the second plurality of conductive plates are electrically connected together. The dielectric material isolates the trench capacitor from the remainder of the chip. In one form, the trench capacitor comprises a plurality of second trenches in the electrically insulating material and the plurality of conductive plates are formed in the second trenches. In another form, a second trench is formed in the electrically insulating material and the trench capacitor is formed by interleaving conductive layers separated by dielectric material in the second trench.