The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Mar. 15, 2000
Chao-chieh Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A new method is provided for the creation of a high Q inductor. STI trenches are etched for both the active region and the inductor region. The location of the STI region for the inductor is removed from the active region by a significant distance. A thick layer of photoresist is deposited over the surface of the substrate that does not coincide with the surface of the substrate over which the inductor is to be created. A high-energy ion implant is performed after which the thick layer of photoresist is removed. The inside surfaces of the STI trenches are lined after which the STI trenches are filled and the process of creating the semiconductor device proceeds, using conventional methods of fabrication of active components and the inductor whereby the inductor is created overlying the surface of the substrate into which the high-energy ion implant has been performed.