The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Mar. 29, 1999
Applicant:
Inventor:
Kuan-Yu Fu, Hsin-Chu, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/978 ; H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/978 ; H01L 2/362 ;
Abstract
A retrograde ESD (electrostatic discharge) protection apparatus is disclosed. In a MOSFET (metal-oxide-semiconductor field effect transistor) having a source region, a drain region, a gate region, and a LDD (Lightly-Doped Drain) region, the ESD protection regions are implanted using heavy doped method under LDD region such that the implantation profile is optimized. The optimized profile is that the concentration of ESD protection region is heaviest at the source/drain junction region.