The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2001

Filed:

Nov. 23, 1999
Applicant:
Inventors:

Hiroshi Ikakura, Tokyo, JP;

Syunji Nishikawa, Tokyo, JP;

Noboru Tokumasu, Tokyo, JP;

Takayoshi Azumi, Tokyo, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract

Disclosed is a method for modifying a film-forming surface of a substrate, which is capable removing a base surface dependency in forming a film on the film-forming surface of the substrate prior to formation of a film by a thermal CVD method using a reactant gas containing an ozone-containing gas containing ozone (O,) in oxygen (O,) and Tetra-Ethyl-Ortho-Silicate. The method comprises the step of modifying the film-forming surface,of the substrate,by allowing any one of ammonia, hydrazine, an amine, gases thereof and aqueous solutions thereof to contact with the surface of the substrate before forming an insulating film,on the surface,of the substrate,.


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