The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
May. 19, 1999
Douglas Duane Coolbaugh, Essex Junction, VT (US);
Glenn Robert Miller, Essex Junction, VT (US);
Sophia Maumovna Ratenberg, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of controlling the resistance and improving the low temperature tolerance of a polysilicon resistor is provided. The method of the present invention employs a second annealing step after one of the high temperature (about 800° C. or above) device activation anneals. That is, the second annealing step can be used after source/drain activation, emitter activation or silicide formation. In accordance with the present invention, if a low temperature second annealing step below about 800° C. is performed after the high temperature device activation anneal, the resistance of the resistor increases, whereas when the second annealing temperature is higher than about 800° C., the resistance of the resistor decreases.