The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Oct. 19, 1999
Daniel Bensahel, Grenoble, FR;
Yves Campidelli, Grenoble, FR;
François Martin, Grenoble, FR;
Caroline Hernandez, Grenoble, FR;
Other;
Abstract
A method which includes, prior to depositing the encapsulating silicon layer: A) depositing on the Si,Ge,layer a thin film of amorphous or polycrystalline silicon, then in treating said silicon film with gas nitric oxide at a temperature between 450 to 600° C. and at a pressure level of 10,to 10,Pa to obtain a thin nitrided silicon film; or B) depositing on the Si,Ge,layer a thin film of amorphous or polycrystalline silicon and oxidizing the silicon film to form a surface film of silicon oxide less than 1 nm thick and optionally treating the oxidized amorphous or polycrystalline silicon film with nitric oxide as in A). The invention is applicable to CMOS semiconductors.