The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Apr. 24, 2000
Horng-Wen Chen, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for determining particles in a dry etching system, prior to performing the dry etching definition of a desired pattern, has been developed. The process features a two cycle, dry etching procedure, with the first cycle performed using a first set of dry etching conditions, not robust enough to result in etching of exposed material, but robust enough do allow the activation, and operation, of a backside helium alarm procedure, used to monitor particle count in the dry etching chamber, to be realized. If particle counts are acceptable a second cycle of the dry etching procedure, using a second set of dry etching conditions, is employed to define the desired pattern. If the particle counts observed via use of the backside helium alarm procedure during the non-etching, first cycle, are high, the dry etching procedure is interrupted. After cleanup of the dry etching chamber, the same samples, with a re-worked photoresist, are again subjected to the two cycle, dry etching procedure.