Nonvolatile reprogrammable interconnect cell with fn tunneling device for programming and erase

Abstract

A programmable interconnect cell for selectively connecting circuit nodes of a field programmable integrated circuit array in a semiconductor substrate includes a switch field effect transistor, a sense field effect transistor, and an electron tunneling device with the transistors and electron tunneling device having interconnected floating gates and interconnected control gates. The floating gates comprise a first polysilicon layer which is restricted to each cell, and the control gates comprise a second polysilicon layer which extends to adjacent cells in the row. The source/drain regions of the sense transistor extend to source/drain regions of sense amplifiers in adjacent rows. Programming and erasing of the switch transistor is effected entirely by electron tunneling in the electron tunneling device.