Thin film transistor and display

Abstract

A gate electrode (,), a gate insulating film (,), and an active layer (,) made of a poly silicon film and having a source (,), a channel (,), and a drain (,) are formed on an insulating substrate (,) and an interlayer insulating film (,) is formed over the whole of the gate insulating film (,), the active layer (,), and a stopper insulating film (,). A drain electrode (,) is formed by filling a contact hole made in the interlayer insulating film (,), the position of which corresponds to the drain (,), with a metal, such as Al. Simultaneously with the drain electrode (,), a conductive layer (,) is formed on the interlayer insulating film (,) over the channel (,). The conductive layer (,) is connected to gate signal line G on the insulating substrate (,) via a contact hole (,) made in the gate insulating film (,) and the interlayer insulating film (,). The width of the conductive layer (,) along the length of the channel (,) is narrower than the actual length of the channel (,) and narrower than the width along the channel length of the gate electrode (,). The conductive layer (,) can therefore shield the channel (,). As a result, even if impurities or the like become attached to the surface of the interlayer insulating film (,), the occurrence of a back channel, for example, is reliably prevented.