The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Dec. 03, 1998
Sung-hoon Cho, Kyungki-do, KR;
Tae-yeol Heo, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon-City, KR;
Abstract
A method of analyzing the morphology of bulk and surface defects on a semiconductor wafer includes: determining a location of the defects; marking an indication proximate the location; milling the wafer using the indication, to thereby make a specimen; and analyzing the specimen to obtain the defects' morphology. Bulk defects as deep 5-250 &mgr;m can be detected and surface defects as deep as 10 &mgr;m from the wafer's surface can be detected. Both morphology analyses preferably include using TEM (Transmission Electron Microscopy). The location determination for both defects preferably includes projecting a laser beam onto the wafer. By obtaining the morphology of the defects, the cause of failure due to the bulk defects and surface defects can accurately be investigated, increasing semiconductor devices' reliability.