The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Aug. 12, 1999
Applicant:
Inventors:
Chung-I Chang, Hsinchu, TW;
Lai-Juh Chen, Hsinchu, TW;
Assignee:
Industrial Technology Research Institute, Hsin-chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
A new method is provided to treat the surface of a low-k material. The invention is specifically aimed at the improvement of the TaN barrier layer that is used in the deposition of a dual damascene structure. The invention uses e-beam exposure to improve the barrier metal (PVD TaN) properties for copper and low-k applications.
Chang, Chung-I. (2001). Method to improve the roughness of metal deposition on low-k material (U.S. Patent No. 6251806). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6251806
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile