The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2001

Filed:

Dec. 18, 1997
Applicant:
Inventors:

Takahisa Yamaha, Hamamatsu, JP;

Yushi Inoue, Hamamatsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract

A hydrogen silsesquloxane resin film is formed flat by spin-coating or another such method on the surface of a semiconductor substrate or another such treatment wafer,, after which the above-mentioned resin film is subjected to a heat treatment in an inert gas atmosphere to form a silicon oxide film of preceramic phase. In a hot plate type of heating apparatus, the wafer,is placed on a conveyor belt,and moved above a heat-generating block,, which heats the wafer in the open air and converts the preceramic-phase silicon oxide film into a ceramic-phase silicon oxide film. The silane generated during heating does not adhere to the wafer surface as SiO,particles, so no microscopic protrusions are produced. N,or another such inert gas may be blown at the wafer,during heating.


Find Patent Forward Citations

Yamaha, Takahisa. (2001). Method of fabricating semiconductor device (U.S. Patent No. 6251805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6251805

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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