The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Oct. 01, 1998
Applicant:
Inventor:
Meng-Jin Tsai, Kaohsiung, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method of manufacturing shallow trench isolation structure comprising the steps of forming a polysilicon mask layer over a substrate, and then patterning the polysilicon mask layer and the substrate to form a trench. Thereafter, a silicon nitride layer is formed covering the sidewalls of the trench. Next, a high-density chemical vapor deposition method is used to deposit oxide material into the trench. Finally, the surface is polished to remove a portion of the oxide layer and the silicon nitride layer until the polysilicon mask layer is exposed. The shallow trench isolation structure can avoid subthreshold kink effect and reduce subthreshold leakage current.