The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Aug. 17, 1998
Wei-Chiang Lin, Hsinchu, TW;
Yuan-Chi Pai, Nantou, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a complementary metal-oxide-semiconductor (CMOS) photosensitive device. In this method, a wafer substrate is provided. Then, a first passivation layer is formed over the wafer substrate. The first passivation layer, which is made from a material that includes silicon nitride or silicon oxide, is heated so that it melts. Then, color filters including a red filter region, a green filter region and a blue filter region are formed over the first passivation layer. The color filters are used to filter out different colors of monochromatic light. The color filters are made from a material that includes acrylic. Subsequently, a second passivation layer having a planar top surface is formed over the color filters. The second passivation layer is made from a material that includes silicon nitride or silicon oxide. Next, photolithographic and etching operations are carried out to form an opening through the second passivation layer and the first passivation layer. This opening exposes the substrate wafer. Finally, a micro-lens layer is formed over the second passivation layer such that an individual micro-lens is positioned above each color filter.