The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2001

Filed:

Feb. 09, 1999
Applicant:
Inventors:

Shao-Wen Hsia, Mission Viejo, CA (US);

Peter Y. Huang, South Coast Metro, CA (US);

Assignee:

Conexant Systems Inc., Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/36 ;
U.S. Cl.
CPC ...
G03F 7/36 ;
Abstract

The present invention relates to method and apparatus for removing photoresist material from a wafer surface. In particular, the present invention employs a dry strip process to remove photoresist material that remains after conductive material has been etched to form conductive features. The inventive process includes a reactive ion strip process that includes fluorine, which forms salts with conductive material embedded in the photoresist material. The salts are then removed from the wafer surface by dissolving them in a solvent such as deionized water.


Find Patent Forward Citations

Hsia, Shao-Wen. (2001). Methods and apparatus for stripping photoresist and polymer layers from a semiconductor stack in a non-corrosive environment (U.S. Patent No. 6251568). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6251568

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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