The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Dec. 18, 1998
Yoshimitsu Tamura, Chiba, JP;
Takumi Nasu, Tsuchiura, JP;
Hideyuki Fukuhara, Ami-machi, JP;
Shigeki Numaga, Abiko, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The objective of the invention is to provide a type of semiconductor memory device whose antifuse can be formed without any additional film manufacturing process. A first electrode is formed by a first polysilicon film,formed on semiconductor substrate,and a second polysilicon film,deposited on the surface of the first polysilicon film. The first electrode, a dielectric film formed on the surface of the first electrode, and a second electrode form capacitor,in the memory cell. An antifuse,with the same configuration as capacitor,is formed in the semiconductor memory device. Because there is no need to use an additional film, the manufacturing cost is low, and antifuse,can be easily arranged. It is also possible to form antifuse,by forming instead of depositing the second polysilicon film,on the surface of the first polysilicon film