The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Oct. 23, 1997
Applicant:
Inventors:
Katsuhide Manabe, Ichinomiya, JP;
Akira Mabuchi, Nagoya, JP;
Hisaki Kato, Okazaki, JP;
Michinari Sassa, Nagoya, JP;
Norikatsu Koide, Nagoya, JP;
Shiro Yamazaki, Inazawa, JP;
Masafumi Hashimoto, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 3/300 ;
Abstract
A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10,&OHgr;cm to 8×,&OHgr;cm or a carrier concentration ranging from 6×10,/cm,to 3×10,/cm,.