The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Oct. 20, 1999
Glen D. Wilk, Dallas, TX (US);
John M. Anthony, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming a crystalline silicon well over a perovskite barrier layer, preferably for use in formation of a resonant tunneling diode. A silicon substrate (,) is provided of predetermined crystallographic orientation. A layer of crystallographic perovskite material (,) is formed over the silicon substrate and substantially matched to the lattice constant of the silicon substrate. A layer of crystallographic silicon (,) is formed over the perovskite layer substantially matched to the lattice constant of the perovskite layer. The perovskite layer is formed by the steps of placing the silicon substrate in a chamber and then evaporating a layer of barium strontium oxide (,) thereon with a thickness of from about three to about six Angstroms and then evaporating a layer of calcium strontium titanate (,) thereon having a thickness of from about six to about 25 Angstroms thereon in the case of a tunneling diode. A second layer of silicon oxide (,) is provided on the layer of silicon remote from the perovskite layer.