The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2001

Filed:

Feb. 24, 1999
Applicant:
Inventors:

Thien T. Nguyen, Austin, TX (US);

Mark I. Gardner, Cedar Creek, TX (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 ; B44C 1/22 ;
U.S. Cl.
CPC ...
C23F 1/00 ; B44C 1/22 ;
Abstract

Methods of fabricating interconnects of aluminum and aluminum alloys are provided. In one aspect, a method is provided for fabricating an interconnect of aluminum-containing material on a surface. A layer of aluminum-containing material is deposited on the surface. The layer of aluminum-containing material is masked with selected portions thereof left exposed. A first etch of the exposed portions is performed in a plasma ambient containing BCl,, Cl,, N,and CF,to establish a plurality of trenches having inwardly sloping sidewalls. An overetch of the exposed portions is performed to the surface in a plasma ambient. High aspect ratio lines may be formed with sloped sidewalls that facilitate subsequent interlevel dielectric formation.


Find Patent Forward Citations

Nguyen, Thien. (2001). Method of fabricating sub-micron metal lines (U.S. Patent No. 6248252). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6248252

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…