The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2001
Filed:
May. 10, 1999
Chao-Chieh Tsai, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
STI is sometimes effected by etching back shallow trenches that have been over-filled with oxide in order to make the upper surfaces co-planar with the semiconductor. This results in the formation of a groove at the oxide-semiconductor interface which exposes the source/drain PN junction, making it vulnerable to shorting during subsequent SALICIDE processes. In the present invention, manufacture of the LDD device proceeds in the normal way except that when silicon nitride spacers are grown on the vertical sides of the gate pedestal, the depositing silicon nitride is also allowed to coat the exposed vertical walls of the trenches (i.e. inside the groove). Following standard practice, a layer of pad oxide is interposed between the trench wall and this additional silicon nitride for purposes of stress relief.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile