The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Feb. 12, 1998
Michael E. Thomas, Milpitas, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
Sidewall spacers, adjacent a gate electrode and source/drain regions of a MOS transistor are formed of a dielectric material that can be completely or partially removed to “lift-off” silicide stringers if formed. After silicide stringer removal, a dielectric layer, having a first portion and second portion that are selectively etchable with respect to one another, is deposited. A gate contact opening is formed in the dielectric layer where the opening is essentially the same dimension as the gate length. Alignment of the opening to the gate electrode is buffered by the thickness of the first portion of the dielectric layer, adjacent sidewalls of the gate electrode.