The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Mar. 08, 1999
Mark I. Gardner, Cedar Creek, TX (US);
Thien T. Nguyen, Austin, TX (US);
Charles E. May, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method is provided for fabricating an isolation structure, the method including forming a first dielectric layer above a structure and forming an opening in the first dielectric layer and the structure, the opening having sidewalls and a bottom. The method also includes forming a second dielectric layer within the opening on a first portion of the sidewalls and above the bottom of the opening. The method further includes forming a third dielectric layer within the opening adjacent the second dielectric layer and on a second portion of the sidewalls of the opening. The method also further includes passivating bonds in the third dielectric layer to reduce charge-trapping in the third dielectric layer, forming dielectric spacers within the opening adjacent the third dielectric layer and forming a dielectric filler within the opening adjacent the dielectric spacers and above the third dielectric layer.