The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Nov. 04, 1998
Chen-Bin Lin, Taipei, TW;
Cheng-Hui Chung, Hsinchu Hsien, TW;
Yei-Hsiung Lin, Hsinchu, TW;
Ching-Chun Huang, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of manufacturing the metallic electrodes of a capacitor in a mixed mode semiconductor device. The method comprises the steps of providing a substrate having a conductive layer and the lower electrode of a capacitor formed thereon, and then depositing a dielectric layer over the substrate. A first opening and a second opening are then formed in the dielectric layer. The first opening exposes a portion of the conductive layer while the second opening exposes a portion of the lower electrode. Finally, a conductive plug and the upper electrode of the capacitor are formed in the respective first and second openings that are in corresponding positions above the conductive layer and lower electrode, respectively.