The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2001
Filed:
Aug. 23, 1999
Yau-Kae Sheu, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a flash memory. A bar-shaped first oxide layer and a bar-shaped first conductive layer are formed on a substrate. A mask layer is formed to cover one side of the first conductive layer from portions of the top surface of the first conductive layer to portions of the surface of the substrate. A second oxide layer is formed by oxidation on the remainder of the first conductive layer and the substrate from exposed portions of top surface of the first conductive layer to the substrate not covered by the mask layer. Meanwhile, the second oxide layer in the corner jointly formed by the first conductive layer and the substrate that are not covered by the mask layer is formed in a beak shape. After stripping the mask layer and portions of the second oxide layer, a doped region between the first conductive layers is formed. Then a dielectric layer and a second conductive layer are formed in sequence on the resulting structure. Subsequently, the second conductive layer, the dielectric layer and the first conductive layer are patterned, wherein the second conductive layer and the dielectric layer are continuous bars and perpendicular to the doped region.