The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Sep. 29, 1998
Applicant:
Inventor:
Anthony C. Miller, Gilbert, AZ (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G01R 3/100 ; G01R 3/128 ;
U.S. Cl.
CPC ...
G01R 3/100 ; G01R 3/128 ;
Abstract
A method for IDDQ testing to detect defects in a semiconductor device in the presence of a high background leakage current. At least a portion of a semiconductor device is biased and a first quiescent current measurement is taken. The measured portion of the semiconductor device is then unbiased and a second quiescent current measurement is taken. The first and second quiescent currents are then compared to determine if a defect exists in the tested portion of the semiconductor device.