The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Nov. 25, 1998
Michael David Fliesler, Santa Cruz, CA (US);
Mark W. Randolph, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In a non-volatile memory comprising a region,for core memory cells and a peripheral region,on a substrate,, a method for improving electrostatic discharge (ESD) robustness of the non-volatile memory comprises the steps of lightly doping the source and drain regions,and,of a peripheral transistor,in the peripheral region,with a first n-type dopant, providing a double diffusion implant mask,having an opening over the region,for the core memory cells and also an opening,over the peripheral region,, and performing a double diffusion implantation through the opening,over the peripheral region,. In an embodiment, the step of performing the double-diffusion implantation comprises the steps of implanting a second n-type dopant comprising phosphorus into the source and drain regions,and,, and implanting a third n-type dopant comprising arsenic into the source and drain regions,and,subsequent to the step of implanting the second n-type dopant.