The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
Apr. 12, 1999
Yasuhito Shiho, Austin, TX (US);
Carole Craig Barron, Cedar Park, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for forming an embedded DRAM integrated circuit (,) begins by forming an asymmetric source and drain structure on the DRAM pass transistors. The asymmetric DRAM transistor structure has a lightly doped shallow current electrode (,) that connects to a trench capacitor (,and,). The bit line current electrode of the DRAM pass transistor is formed having an LDD region (,) and an adjacent highly doped drain region (,). The region (,) helped to improve DRAM data retention reliability. In addition, the current electrode connected to the bit line is silicided to form a silicide region (,) which has improved coupling to an overlying tungsten plug (,). In addition, a P-type halo implant (,) is used to reduce or eliminate adverse short channel effects within a DRAM device.