The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2001

Filed:

Nov. 23, 1999
Applicant:
Inventors:

Bomy A. Chen, Stormville, NY (US);

Chorng-Lii Hwang, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract

The difficulty of etching noble metals in ferroelectric capacitors is eliminated by a damascene process that employs chemical-mechanical polishing to remove the unwanted material, resulting in a lower electrode formed in an aperture in a dielectric, having a flat central portion and a wall extending from the central portion to the top surface of the surrounding dielectric; and an upper electrode formed in a two-level aperture, so that the upper electrode structure has a flat central portion, a first vertical wall extending from the central portion to a rim surrounding the central portion and extending over the wall of the lower electrode, and a second vertical wall extending from the rim to the top surface of a surrounding dielectric.


Find Patent Forward Citations

Chen, Bomy. (2001). Damascene process for forming ferroelectric capacitors (U.S. Patent No. 6238963). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6238963

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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