The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2001
Filed:
May. 06, 1999
Shan Sun, Colorado Springs, CO (US);
Steven D. Traynor, Colorado Springs, CO (US);
Ramtron International Corporation, Colorado Springs, CO (US);
Abstract
Ferroelectric switching properties are severely degraded in a hydrogen ambient atmosphere. By controlling the polarity of the capacitors in a ferroelectric memory during the manufacturing process, the amount of degradation can be significantly reduced. After metalization of a ferroelectric memory wafer, all of the ferroelectric capacitors are poled in the same direction. The polarization vector is in a direction that helps to counteract hydrogen damage. A hydrogen gas anneal is subsequently performed to control underlying CMOS structures while maintaining ferroelectric electrical properties. The wafer is then passivated and tested.