The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Apr. 20, 1999
Chen-Chung Hsu, Hsinchu Hsien, TW;
Abstract
An electrostatic discharge protective circuit formed on a substrate is described. A gate electrode is formed over the substrate. A drain region is formed in the substrate at one side of the gate electrode. A source region is formed in the substrate at the other side of the gate electrode. A dielectric layer having a drain contact and a source contact formed therein is formed over the substrate, wherein the drain contact is electrically coupled to the drain region and the source contact is electrically coupled to the source region. A plurality of floating polysilicons is formed on the substrate in the dielectric layer between the drain contact and the gate electrode. Since the floating polysilicons are staggered on the substrate in a checkered pattern, the electrostatic discharge transient current path is greatly increased. Therefore, the electricity dissipation length is greatly increased. Hence, the protective efficacy of the electrostatic discharge protective circuit can be improved.