The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Mar. 16, 1999
Makoto Miyoshi, Nagoya, JP;
Yuichiro Imanishi, Nagoya, JP;
Keiko Kushibiki, Fujisawa, JP;
Masakazu Kobayashi, Yokosuka, JP;
Kenji Furuya, Yokohama, JP;
Kazuhiko Shinohara, Yokohama, JP;
Other;
Abstract
A p-type thermoelectric converting substance used as a p-type semiconductor in a thermoelectric converting module consisting essentially of a substance expressed by a chemical formula CoSb,Sn,or CoSb,Ge,(2.7<x<3.4, 0<y<0.4, x+y>3), and containing a small amount of oxygen z defined by 2(x+y−3)≧z. The amount of oxygen z is preferably limited such that it is not higher than 0.1 molecules per 1 molecule of Co. An alloy ingot consisting essentially of CoSb,Sn,or CoSb,Ge,(2.7<x<3.4, 0<y<0.4, x+y>3) is ground to obtain a raw material powder. Then, the powder is cast into a mold, and the mold is sintered under a non-oxidizing or reducing atmosphere. The thus obtained substance reveals p-conductivity in a stable manner over a wide temperature range, and has excellent thermoelectric converting properties.