The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
May. 04, 1999
Naoki Kasai, Tokyo, JP;
Hiroki Koga, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A gate electrode,is provided on a surface of a semiconductor substrate,, an insulation film,being formed over the gate electrode,and the side wall of the gate electrode,being covered by an insulation film,, and, on a diffusion region,that is formed on the surface of the semiconductor substrate,at both sides of the above-noted gate electrode,and in a region that is sandwiched between the above-noted side walls,, a silicon single crystal is anisotropically grown in a direction that is perpendicular with respect to the semiconductor substrate,, so as to form a pad,, and the anisotropic growth of the silicon single crystal is only within a part,of the region sandwiched between parts of the side wall,that are perpendicular to the substrate surface.