The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2001
Filed:
Oct. 28, 1998
Applicant:
Inventors:
Assignee:
Komatsu Electronic Metals Co., Ltd., Hiratsuka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1304 ; B24B 4/900 ;
U.S. Cl.
CPC ...
H01L 2/1304 ; B24B 4/900 ;
Abstract
A method for manufacturing semiconductor wafers is provided. According to this invention, wafers are obtained by slicing a single-crystal semiconductor ingot. The sliced wafers are beveled at their peripheral rims. The beveled wafers are flattened by a lapping process. The front and the rear surfaces of the flattened wafers are spin-etched with an acid etchant liquid. The glossiness of the rear surfaces of the spin-etched wafers is controlled to a value of 130-300 %. The front surfaces of the wafers whose rear surfaces have been spin-etched are polished, thereby obtaining mirror-polished surfaces. The front surfaces may also be spin-etched prior to polishing.