The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jan. 12, 1998
Morteza C. Afghahi, Tempe, AZ (US);
Yueming He, Chandler, AZ (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A Charge Pump Avoiding Gain Degradation Due to the Body Effect. A charge pump having a first input and a first output, a stage of the charge pump including a first capacitor having a first node and a second node, the second node coupled to receive a first signal; a first p-type transistor having a first gate, a first source, and a first drain, the first gate being coupled to the first node and the first drain, the first source being coupled to the first input; a second capacitor having a third node and a fourth node, the fourth node coupled to receive a second signal; and a second p-type transistor having a second gate, a second source, and a second drain, the second gate being coupled to the third node and the second drain, the second source being coupled to the first drain, the second drain being coupled to the first output.