The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jul. 29, 1998
Yun-Kang (Kevin) K. Wu, Austin, TX (US);
Danny P. Shum, Austin, TX (US);
Craig Thomas Swift, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A non-volatile memory cell (,) includes a drain-side select transistor (,), a source-side select transistor (,), and a storage transistor (,). The drain-side select transistor (,) is adjacent to the drain of the storage transistor (,) to prevent drain-disturb events. The source-side select transistor (,) is adjacent to the source of the storage transistor (,) to prevent source-disturb events. The select gate (,) of the drain-side select transistor (,), the select gate (,) of the source-side select transistor (,), and the floating gate (,) of the storage transistor (,) are formed on a dielectric layer (,) having a uniform thickness.