The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Dec. 21, 1998
Christopher O. Schmidt, Sunnyvale, CA (US);
Sunil D. Mehta, San Jose, CA (US);
Vantis Corporation, Sunnyvale, CA (US);
Abstract
A non-volatile memory cell structure includes a floating gate, a reverse breakdown hot carrier injection element and a sense transistor. The reverse breakdown hot carrier injection element is at least partially formed in a first region of a semiconductor substrate under at least a portion of the floating gate. The sense transistor is at least partially formed in a second region of a semiconductor substrate, isolated from the first region, and under at least a portion of the floating gate. A read transistor may be connected to the sense transistor. In one embodiment, the read transistor is at least partially formed in the second region of a semiconductor substrate, and connected to the sense transistor.