The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Jan. 08, 1999
Applicant:
Inventor:
Chih-Hsun Chu, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1762 ;
U.S. Cl.
CPC ...
H01L 2/1762 ;
Abstract
In this method of reconstructing an alignment mark during shallow trench isolation process, a mask layer is formed on the substrate and a cap layer is further formed to fill a recess within the mask layer above the alignment mark. A trench is then formed within the substrate. An insulating layer is formed to fill the trench and a CMP process is carried out to globally planarize the wafer until exposing the mask layer. The cap layer, the mask layer and the pad oxide layer are then successively removed. An isolation region is therefore formed in the trench and the alignment mark can be reconstructed.