The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Apr. 07, 1999
Applicant:
Inventor:
Meng-Jin Tsai, Kao-Hsiung, TW;
Assignee:
United Microelectronics Corp,, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A metal-insulator-metal capacitor for improved mixed-mode capacitor in a logic circuit of a semiconductor device is disclosed. The bottom electrode of the capacitor is polycide and the top electrode is metal formed by damascene technology. The middle layer of the capacitor is a dielectric layer formed by using a chemical vapor deposition method. The voltage coefficient of this capacitor is approximate to zero.