The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Jul. 29, 1999
Takashi Kawanoue, Yokohama, JP;
Junichi Wada, Yokohama, JP;
Tetsuo Matsuda, Tano-gun, JP;
Hisashi Kaneko, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device comprises a base layer, a barrier metal layer formed on the base layer and a metal interconnect formed on the barrier metal layer, the barrier metal layer being made of at least one element &agr; selected from metal elements and at least one element &bgr; selected from a group of boron, oxygen, carbon and nitrogen and having at least two compound films &agr;&bgr;n with different compositional ratios in atomic level arranged to form a laminate. When the elements &agr; contained in the compound films &agr;&bgr;n are same and identical and at least one of the at least two compound films &agr;&bgr;n is a compound film &agr;&bgr;x (x>1), the via resistance and the interconnect resistance of the device can be reduced, while maintaining the high barrier effect.