The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Apr. 28, 1999
Tung-Po Chen, Taichung, TW;
Jih-Wen Chou, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a field effect transistor, wherein a substrate with a gate is provided. A liner oxide layer and a first spacer are formed adjacent to the sides of the gate. An epitaxial silicon layer is formed at both sides of the gate in the substrate, while a shallow source/drain (S/D) extension junction is formed in the substrate below the epitaxial silicon layer. An oxide layer and a second spacer are formed to be closely connected to the first spacer and form the S/D region below the epitaxial silicon layer. A part of the epitaxial silicon layer is then transformed into a metal silicide layer, so as to complete the process of the field effect transistor.