The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Apr. 06, 1999
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
A non-volatile semiconductor memory device and a manufacturing method of the same where an etching residue generating short-circuit between gates is made harmless or a device is miniaturized are obtained. The method includes the steps of forming on a semiconductor substrate, a first gate layer and a second gate layer, forming a second gate electrode by etching the second gate layer, forming a first gate electrode by etching the first gate layer using the second gate electrode as a mask, and removing a residue left on a step portion by isotropic etching.