The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Nov. 30, 1999
Applicant:
Inventor:
Yong-Fen Hsieh, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
The present invention is a method of fabricating a dynamic random access memory. The node contact opening and the capacitor opening are combined in a step of the dual damascene opening process during the capacitor formation. The bottom of the capacitor is embedded in the dual damascene opening. The conducting layer used for forming the bottom plates is polished by chemical mechanical polishing to form the bottom plates that are separated each other. Therefore, patterning of bottom plate by photolithography and etching is not necessary in the present invention.