The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Jun. 05, 1998
Masashi Maekawa, Vancouver, WA (US);
Yukihiko Nakata, Vancouver, WA (US);
Other;
Abstract
A method has been provided to form a sheet of large grain crystallized silicon, in an early stage of transistor production, before the areas of the source and drain are defined. The method takes advantage of high annealing temperatures and transition metals to speed the lateral growth of silicide. By using higher temperatures, the number of amorphous enclaves is minimized and the transition metal nucleation site can be made small. A small transition metal nucleation site, in turn, can be more easily located near the center of a transistor, or where it is convenient. After annealing, the areas close to the silicide nucleation site are transformed into polycrystalline with a high electron mobility, desirable for the formation of source/drain and channel regions. Silicide products, away from the transistor active areas, are etched away when the area of the source and drain are defined. A product by process using the method of the above-described invention is also provided.