The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2001

Filed:

Oct. 14, 1999
Applicant:
Inventors:

Vikram Pavate, San Jose, CA (US);

Keith J. Hansen, San Jose, CA (US);

Glen Mori, Pacifica, CA (US);

Murali Narasimhan, San Jose, CA (US);

Seshadri Ramaswami, San Jose, CA (US);

Jaim Nulman, Palo Alto, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22F 1/00 ; C22F 1/04 ; C23C 1/434 ;
U.S. Cl.
CPC ...
C22F 1/00 ; C22F 1/04 ; C23C 1/434 ;
Abstract

Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.


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