The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Jul. 28, 1999
Applicant:
Inventors:
Masahiko Baba, Vancouver, WA (US);
Scott Matthew Kirkland, Portland, OR (US);
Richard William Rudberg, Vancouver, WA (US);
Susumu Sonokawa, Nishishirakawa-gun, JP;
Darren Mark Taie, Vancouver, WA (US);
Akira Uchikawa, Vancouver, WA (US);
Assignee:
Seh America, Inc., Vancouver, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/516 ;
U.S. Cl.
CPC ...
C30B 1/516 ;
Abstract
A method of manufacturing a crystal of silicon in accordance with a Czochralski method, includes the steps of applying an electric potential across a quartz crucible containing a silicon melt, and pulling a crystal of silicon from the silicon melt.
Baba, Masahiko. (2001). Method of manufacturing crystal of silicon using an electric potential (U.S. Patent No. 6228165). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6228165
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile