The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Apr. 01, 1999
Tse Yao Huang, Taipei, TW;
Yun Sen Lai, Hsinchu Hsien, TW;
Nanya Technology Corporation, , TW;
Abstract
This present discloses a method for STI top rounding control, the steps comprising: (a) providing a semiconductor substrate; (b) forming an oxide layer on the substrate; (c) forming a hard mask on the oxide layer; (d) forming a photoresist pattern with an opening exposing the hard mask at a predetermined STI trench region on the hard mask; (e) etching the exposed hard mask and the underlying oxide layer within the opening in sequence, and continuously over-etching to remove part of the semiconductor substrate to form a window lower than the surface of the oxide layer; and (f) using the photoresist pattern and the hard mask as an etching mask, removing part of the exposed semiconductor substrate in the window to form an STI trench.