The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Mar. 10, 1999
Manabu Hayashi, Kanagawa, JP;
Yumiko Hamada, Kanagawa, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
A semiconductor device manufacturing method where the first insulating film, the first semiconductor film, and the second insulating film are formed in sequence on or above a semiconductor substrate. A resist mask having a window therein is formed on the second insulating film. A first hole is formed in the second insulating film via the window or the first hole is formed in the second insulating film and the first semiconductor film. An overetching using a halogen compound gas forms a sidewall on an inner peripheral surface of the first hole. A second hole having a small diameter than the first hole is formed by etching through the first hole surrounded by the sidewall and the resist.